isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • Built-in Damper Diode APPLICATIONS • Color TV horizontal deflection output • Color display horizontal deflection output

文件：239.58 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage;high speed • High reliability. APPLICATIONS • Ultrahigh-definition CRT display • Horizontal deflection output applications

文件：88.37 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High voltage;high speed • High reliability. APPLICATIONS • Ultrahigh-definition CRT display • Horizontal deflection output applications

文件：146.4 Kbytes 页数：3 Pages

SAVANTIC

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers

文件：59.28 Kbytes 页数：1 Pages

WINGS

永盛电子

NPN Triple Diffused Planar Silicon Transistor 500V / 7A Switching Regulator Applications

500V / 7A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating mounting.

文件：59.22 Kbytes 页数：4 Pages

SANYO

三洋

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) ● High Collector-Base Voltage(VCBO=1500V) ● High Speed Switching

文件：28.28 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SB1157 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications

文件：89.37 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SB1157 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications

文件：121.06 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1158 APPLICATIONS • Designed for high power amplifier applications.

文件：250.49 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1159 APPLICATIONS • Designed for high power amplifier applications.

文件：250.48 Kbytes 页数：2 Pages

ISC

无锡固电