NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Complements to 2SB1188 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information)

文件：711.06 Kbytes 页数：3 Pages

MCC

丝印：DB；Package：SOT-89；Medium Power Transistor

Features • Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

文件：224.04 Kbytes 页数：1 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2A, 40V NPN Epitaxial Planar Transistor

DESCRIPTION The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.

文件：248.31 Kbytes 页数：2 Pages

SECOS

喜可士

NPN Plastic-Encapsulate Transistors

Features • Halogen free available upon request by adding suffix -HF • Complements to 2SB1188 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information)

文件：711.06 Kbytes 页数：3 Pages

MCC

Medium power transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

文件：176.4 Kbytes 页数：4 Pages

ROHM

罗姆

Medium power transistor

FEATURES ● High breakdown voltage and high current. ● Complementary pair with 2SB1189.

文件：175.34 Kbytes 页数：4 Pages

BILIN

银河微电

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Breakdown Voltage and Current ● Excellent DC Current Gain Linearity ● Complement the 2SB1189

文件：1.5797 Mbytes 页数：4 Pages

JIANGSU

长电科技

Medium Power Transistor

Features ● High breakdown voltage, BVCEO=80V, and high current, IC=0.7A.

文件：50.71 Kbytes 页数：1 Pages

KEXIN

科信电子

Medium power transistor (80V, 0.7A)

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：71.05 Kbytes 页数：3 Pages

ROHM

罗姆

MEDIUM POWER TRANSISTOR

Features 1) High breakdown voltage, BVCEO= -80V, and high current, IC= -0.7A. 2) Complements the 2SB1767 / 2SB1859 / 2SB1200F. Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238 / 2SB889F.

文件：42.27 Kbytes 页数：1 Pages

ROHM

罗姆