Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON • High DC current gain APPLICATIONS • For low frequency power amplifier applications

文件：129.21 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220Fa package • DARLINGTON • High DC current gain APPLICATIONS • For low frequency power amplifier applications

文件：106.48 Kbytes 页数：3 Pages

SAVANTIC

2A, 40V NPN Epitaxial Planar Transistor

DESCRIPTION The 2SD1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.

文件：248.31 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：DBP；Package：SOT-89；NPN Silicon Epitaxial Planar Transistor

FEATURES Low saturation voltage:VCE(sat)=0.5V(Typ.) PC=0.5W(Mounted on ceramic substrate) Small flat package. Complementary pair with 2SB1188. APPLICATIONS Power amplifier application.

文件：480.3 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：126.85 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Medium Power Transistor

Features • Low VCE(sat), VCE(sat) = 0.5V (typical) (IC = 2A, IB= 0.2A).

文件：224.04 Kbytes 页数：1 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SOT-89 Plastic-Encapsulate Transistors

文件：502.27 Kbytes 页数：3 Pages

WILLAS

威伦电子

Plastic-Encapsulate Transistors

FEATURES • Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) • Complements to 2SB1188

文件：239.57 Kbytes 页数：2 Pages

HOTTECH

合科泰

NPN General Purpose Transistor

Features « Supply line switching circuits « DC/DC converter applications. Battery management applications

文件：2.21239 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

Medium power transistor (32V, 2A)

Features 1) Low VCE(sat). VCE(sat)= 0.5V (Typ.)(IC/IB= 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M Structure Epitaxial planar type NPN silicon transistor

文件：176.4 Kbytes 页数：4 Pages

ROHM

罗姆