Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.63 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.58 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio)

Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● I type package enabling direct soldering of the radiating fin to the pr

文件：48.91 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)

Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● High emitter to base voltage VEBO ● I type package enabling direct soldering of the radiating fin to the p

文件：57.9 Kbytes 页数：3 Pages

PANASONIC

松下

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 170V(Min) • High DC Current Gain : hFE= 1500(Min) @IC= 5A • Low Collector Saturation Voltage APPLICATIONS • Designed for high voltage high current amplifier applications.

文件：249.59 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon Epitaxial Planar Transistor

FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general.

文件：204.44 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：AAQ/AAR/AAS；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Low VCE(sat).(Typ.8mV at IC/IB=10/1mA). ● Optimal for muting. ● Power dissipation.PD=200mW. APPLICATIONS ● Audio frequency general.

文件：1.1177 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-23 Plastic-Encapsulate Transistors

FEATURES Optimal for muting.

文件：1.20546 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Optimal for muting.

文件：751.07 Kbytes 页数：2 Pages

HTSEMI

金誉半导体