| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package 文件：216.3 Kbytes 页数：18 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package 文件：216.3 Kbytes 页数：18 Pages | RENESAS 瑞萨 | RENESAS | ||
丝印：R54；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab 文件：216.99 Kbytes 页数：18 Pages | RENESAS 瑞萨 | RENESAS | ||
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliabil 文件：3.6626 Mbytes 页数：16 Pages | CEL | CEL | ||
丝印：R54；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab 文件：216.99 Kbytes 页数：18 Pages | RENESAS 瑞萨 | RENESAS | ||
丝印：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of 文件：224.86 Kbytes 页数：22 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol 文件：3.84257 Mbytes 页数：17 Pages | CEL | CEL | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol 文件：91.41 Kbytes 页数：20 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol 文件：91.41 Kbytes 页数：20 Pages | NEC 瑞萨 | NEC | ||
丝印：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of 文件：224.86 Kbytes 页数：22 Pages | RENESAS 瑞萨 | RENESAS |
详细参数
- 型号：
2SC575
- 制造商：
Renesas Electronics Corporation
- 功能描述：
RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT343 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
NEC |
25+ |
SOT343 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
询价 | ||
NEC |
24+ |
SOT-343SOT-323-4 |
9200 |
新进库存/原装 |
询价 | ||
NEC |
13+ |
NA |
19238 |
原装分销 |
询价 | ||
NEC |
24+ |
SOP |
1068 |
原装现货假一罚十 |
询价 | ||
NEC |
1922+ |
SOT-343 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
NEC |
23+ |
SOT343 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
RENESAS/瑞萨 |
2511 |
SOT343 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT343 |
20000 |
只做原装 |
询价 | ||
RENESAS |
2016+ |
SOT-343 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 |
相关规格书
更多- 2SC5754-T2-A
- 2SC5761-T2-A
- 2SC5778
- 2SC5784(TE85L,F)
- 2SC57880PA
- 2SC5808-TL-E
- 2SC581300L
- 2SC582
- 2SC5824T100Q
- 2SC5825TLQ
- 2SC5826TV2Q
- 2SC5832-TL-E
- 2SC584500L
- 2SC5846G0L
- 2SC5855
- 2SC5859(Q)
- 2SC5865
- 2SC5865TLQ
- 2SC5866
- 2SC5866TLR
- 2SC5867TLR
- 2SC5868TLR
- 2SC5876T106R
- 2SC5880TV2R
- 2SC5881TLR
- 2SC5888
- 2SC5902
- 2SC5902001TV
- 2SC5916TLQ
- 2SC5917TLR
- 2SC5918T100R
- 2SC5919TLR
- 2SC5936
- 2SC5939G0L
- 2SC5946G0L
- 2SC5948-R(Q)
- 2SC5949-R(Q)
- 2SC5964-S-TD-E
- 2SC5964-TD-E
- 2SC5976(TE85L,F)
- 2SC5984TLQ
- 2SC59930P
- 2SC5994-TD-E
- 2SC6000(TE16L1,NQ)
- 2SC6011
相关库存
更多- 2SC5755(TE85L,F)
- 2SC5773JR(TL-E)
- 2SC578
- 2SC5785(TE12L,F)
- 2SC57880QA
- 2SC5810(TE12L,F)
- 2SC5819(TE12L,F)
- 2SC5823-TL-E
- 2SC5824T100R
- 2SC5825TLR
- 2SC5826TV2R
- 2SC5842001KT
- 2SC584600L
- 2SC584800A
- 2SC5858
- 2SC58630QL
- 2SC5865TL
- 2SC5865TLR
- 2SC5866TLQ
- 2SC5867TLQ
- 2SC5868TLQ
- 2SC5876T106Q
- 2SC5880TV2Q
- 2SC5881TLQ
- 2SC5886A(T6L1,NQ)
- 2SC5888-1EX
- 2SC5902000LK
- 2SC5915-DL-E
- 2SC5916TLR
- 2SC5918T100Q
- 2SC5919TLQ
- 2SC5931-RL
- 2SC593900L
- 2SC594600L
- 2SC5948-O(Q)
- 2SC5949-O(Q)
- 2SC59540Q
- 2SC5964-S-TD-H
- 2SC5964-TD-H
- 2SC5980-TL-E
- 2SC5990-TD-E
- 2SC59930Q
- 2SC6000
- 2SC6010
- 2SC6011A
