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型号	下载订购	功能描述	制造商上传企业	LOGO
2SC5750	文件：216.3 Kbytes Page：18 Pages	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package 文件：216.3 Kbytes 页数：18 Pages	RENESAS 瑞萨	RENESAS
2SC5750-T1	文件：216.3 Kbytes Page：18 Pages	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • 4-pin super minimold package 文件：216.3 Kbytes 页数：18 Pages	RENESAS 瑞萨	RENESAS
2SC5750_15	文件：216.98 Kbytes Page：18 Pages	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD 文件：216.98 Kbytes 页数：18 Pages	RENESAS 瑞萨	RENESAS
2SC5750-A	文件：100 bytes Page：1 Pages	Package：SC-82A，SOT-343；包装：托盘类别：分立半导体产品晶体管 - 双极（BJT）- 射频描述：RF TRANS NPN 6V 15GHZ SOT343	CEL	CEL
2SC5750-T1-A	文件：100 bytes Page：1 Pages	Package：SC-82A，SOT-343；包装：托盘类别：分立半导体产品晶体管 - 双极（BJT）- 射频描述：RF TRANS NPN 6V 15GHZ SOT343	CEL	CEL

更多2SC5750供应商更新时间2026-3-11 16:30:00