TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER)

Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin • Complementary to 2SD2012

文件：157.7 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier

文件：200.82 Kbytes 页数：4 Pages

JMNIC

锦美电子

丝印：B1375；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector Metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012

文件：1.0731 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Silicon PNP epitaxial planer type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1996 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Optimum for low-voltage operation and for converters. ● Allowing supply with the radial taping.

文件：39.39 Kbytes 页数：2 Pages

PANASONIC

松下

silicon PNP Power Transistors

文件：113.44 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon PNP Power Transistor

文件：359.12 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

文件：359.12 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistors

文件：144.6 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：192.45 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件：192.45 Kbytes 页数：4 Pages

JMNIC

锦美电子