丝印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：EF；Package：TO-220FN；Power Transistor(-60V, -3A)

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：42.73 Kbytes 页数：1 Pages

ROHM

罗姆

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for power switching applications

文件：251.25 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Breakdown Voltage High ● Reverse Cut-off Current Small ● Saturation Voltage Low ● Collector Power dissipation PCM : 2 W (Tamb=25.) 30 W (Tcase=25.)

文件：1.41846 Mbytes 页数：2 Pages

JIANGSU

长电科技

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for power switching applications

文件：129.4 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • PC=2W(Ta=25°C) /30W(TC=25°C) • Low collector saturation voltage • Wide area of safe operation

文件：111.87 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low saturation voltage, excellent DC current gain characteristics. Applications Audio frequency power amplifier applications.

文件：1.05242 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification

文件：142.9 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter BreakdownVoltage- :V(BR)CEo=-120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2064 APPLICATIONS • Designed for high power amplifications.

文件：128.6 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification

文件：192.45 Kbytes 页数：4 Pages

JMNIC

锦美电子