Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 ■ Features ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which ca

文件：51.52 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification

文件：162.17 Kbytes 页数：4 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2066 APPLICATIONS • Designed for high power amplifications.

文件：249.31 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2066 APPLICATIONS • Designed for high power amplifications.

文件：132.26 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SD2066 • Wide area of safe operation APPLICATIONS • For high power amplification

文件：138.73 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low VCE(sat), High PC, complementary pair with 2SD2012. Applications Audio frequency power amplifier applications.

文件：1.03826 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier

文件：247.94 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier

文件：170.91 Kbytes 页数：4 Pages

ISC

无锡固电

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • High Power Dissipation: PC=25W(TC=25℃ ) • Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) • Collector Metal(Fin)is Coverd with Mold Regin • Complementary to 2SD2012

文件：352.73 Kbytes 页数：2 Pages

JIANGSU

长电科技

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25°C • Low Collector SaturationVoltage- : VCE(sat)- -1.5V(Max)@ (|c= -2A, IB= -0.2A) • Complement to Type 2SD2012 APPLICATIONS • Designed for audio frequency po

文件：126.49 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司