PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

文件：206.12 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：A1962O；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

文件：206.12 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：A1962R；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications

High-Frequecy Low-Noise Amplifier,Ultrahigh-Speed Switching Applications Features · Low noise : NF=1.5dB typ (f=1GHz). · High gain : | S2le |2=9dB typ (f=1GHz). · High cutoff frequency : fT=5GHz typ.

文件：129.52 Kbytes 页数：5 Pages

SANYO

三洋

Complement to Type 2SC5248

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-160V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SC5248 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications.

文件：105.72 Kbytes 页数：2 Pages

ISC

无锡固电

For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)

Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. 3) High ft. (Typ. 150MHz) 4) Wide SOA(safe operating area) 5) Complements the 2SC5248.

文件：38.36 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Flat DC current gain characteristics, high breakdown voltage, high fT, wide SOA, complements the 2SC5248. Applications High-voltage switching (audio output amplifier transistor, stabilized power supply tr

文件：792.14 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- :V(BR)CEo=-160V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SC5248 APPLICATIONS • Power amplifier applications. • Driver stage amplifier applications.

文件：74.23 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Muting Circuit Applications??????

PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.

文件：78.33 Kbytes 页数：3 Pages

SANYO

三洋