150 Watt Silicon Epitaxial Planar PNP Power Transistor

DESCRIPTION ·With TO-3PN-SQ package ·Complement to type 2SC5200N APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

文件：1.08585 Mbytes 页数：4 Pages

THINKISEMI

思祁半导体

Power Amplifier Applications

FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications

文件：501.15 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications

文件：501.15 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Power Amplifier Applications

FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications

文件：501.15 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

POWER AMPLIFIER APPLICATIONS

Power Amplifier Applications • High collector voltage: VCEO= −230 V (min) • Complementary to 2SC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage.

文件：229.6 Kbytes 页数：3 Pages

TOSHIBA

东芝

PNP Epitaxial Silicon Transistor

Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC= -15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -230V • Wide S.O.A for reliable operation. • Ex

文件：215.59 Kbytes 页数：6 Pages

Fairchild

仙童半导体

PNP Epitaxial Silicon Transistor

Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC= -15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -230V • Wide S.O.A for reliable operation. • Ex

文件：215.59 Kbytes 页数：6 Pages

Fairchild

仙童半导体

Silicon PNP Epitaxial

Features ● High voltage VCEO=-50V ● Low collector to emitter saturation voltage VCE(sat)=-0.2v typ (@IC=-500mA, IB=-10mA) ● High hFE: hFE=400 to 800 ● Small package for mounting

文件：51.64 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP Epitaxial

Silicon PNP Epitaxial Features High voltage VCEO=-50V High fT:fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting

文件：52.03 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP Epitaxial

Features ● Low collector saturation voltage VCE(sat)=-0.25V typ ● High fT: fT=180MHz typ ● Excellent linearity of DC forward current gain ● High collector current Icm=-1A ● Small package for mounting

文件：52 Kbytes 页数：1 Pages

KEXIN

科信电子