General Purpose Amplifier Applications Switching and Muting Switch Application

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat)(1) = −15 mV (typ.) @IC= −10 mA/IB= −0.5 mA • Large collector current: IC= −500 mA (max)

文件：234.95 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon PNP Epitaxial

■ Features ● Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA ● Large collector current: IC = −500 mA (max)

文件：53.26 Kbytes 页数：2 Pages

KEXIN

科信电子

General Purpose Amplifier Applications

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat)(1) = −15 mV (typ.) @IC= −10 mA/IB= −0.5 mA • Large collector current: IC= −500 mA (max)

文件：234.95 Kbytes 页数：5 Pages

TOSHIBA

东芝

General Purpose Amplifier Applications Switching and Muting Switch Application

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat)(1) = −15 mV (typ.) @IC= −10 mA/IB= −0.5 mA • Large collector current: IC= −500 mA (max)

文件：234.95 Kbytes 页数：5 Pages

TOSHIBA

东芝

TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA • Large collector current: IC = −400 mA (max)

文件：159.18 Kbytes 页数：4 Pages

TOSHIBA

东芝

General Purpose Amplifier Applications Switching and Muting Switch Application

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA • Large collector current: IC = −400 mA (max)

文件：131.77 Kbytes 页数：5 Pages

TOSHIBA

东芝

General Purpose Amplifier Applications Switching and Muting Switch Application

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA • Large collector current: IC = −400 mA (max)

文件：223.48 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

Features • High voltage large current operation. VCEO = –80 V, IC = –300 mA • High fT. fT = 1.3 GHz • Small output capacitance. Cob = 2.9 pF Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switchin

文件：29.38 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 ■Features ● High collector to emitter voltage VCEO.

文件：37.2 Kbytes 页数：2 Pages

Panasonic

松下

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

文件：150.14 Kbytes 页数：2 Pages

TOSHIBA

东芝