Muting Circuit Applications

PNP Epitaxial Planar Silicon Transistor Muting Circuit Applications Features • Ultrasmall-sized package permitting applied sets to be made small and slim. • Small output capacitance. • Low collector-to-emitter saturation voltage. • Low ON resistance.

文件：55.38 Kbytes 页数：4 Pages

SANYO

三洋

High-Voltage Amp, High-Voltage Switching Applications

High-Voltage Amplifier, High-Voltage Switching Applications Features • High breakdown voltage (VCEO min=–900V). • Small Cob (Cob typ=2.2pF). • High reliability (Adoption of HVP process).

文件：83.62 Kbytes 页数：3 Pages

SANYO

三洋

High-Voltage Amp, High-Voltage Switching Applications

Features • High breakdown voltage (VCEO min=–900V). • Small Cob (Cob typ=2.2pF). • High reliability (Adoption of HVP process). • Package of full isolation type.

文件：81.85 Kbytes 页数：3 Pages

SANYO

三洋

High-Voltage Amplifier, High-Voltage Switching Applications

High-Voltage Amplifier, High-Voltage Switching Applications Features • High breakdown voltage(VCEO min=--900V). • Small Cob(Cob typ=2.2pF). • High reliability(Adoption of HVP process). • Package of full isolation type.

文件：30.23 Kbytes 页数：3 Pages

SANYO

三洋

High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications

Features • High fT (fT=1.7GHz typ). • Large current capacity (IC=–400mA).

文件：111.99 Kbytes 页数：4 Pages

SANYO

三洋

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-Voltage Switching Applications • High breakdown voltage: VCEO= −400 V

文件：156.99 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon PNP Triple Diffused Type

Features High voltage: VCE= -400 V

文件：54.04 Kbytes 页数：1 Pages

KEXIN

科信电子

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V

文件：152.91 Kbytes 页数：3 Pages

TOSHIBA

东芝