TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V

文件：152.91 Kbytes 页数：3 Pages

TOSHIBA

东芝

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products.

文件：44.58 Kbytes 页数：4 Pages

SANYO

三洋

PNP EPITAXIAL SILICON TRANSISTOR

FEATURES • High fT fT = 8.5 GHz TYP. • High gain | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA • High-speed switching characterstics • Equivalent NPN transistor is the NE68133 / 2SC3583.

文件：1.45866 Mbytes 页数：12 Pages

CEL

PNP Epitaxial Silicon Transistor

Features ● High fT :fT = 8.5 GHz TYP. ● High gain | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA ● High-speed switching characterstics

文件：36.54 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

FEATURES • High fT fT = 8.5 GHz TYP. • High gain | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA • High-speed switching characterstics • Equivalent NPN transistor is the 2SC3583.

文件：58.63 Kbytes 页数：7 Pages

NEC

瑞萨

PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

FEATURES • High fT fT = 5.5 GHz TYP. • | S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA • High speed switching characteristics • Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424.

文件：60.21 Kbytes 页数：5 Pages

NEC

瑞萨

PNP Eitaxial Silicon Transistor

Features ● High fT (fT=5.5GHz TYP). ● High gain |S21e|2 =10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA ● High-speed switching characterstics

文件：36.61 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP EPITAXIAL SILICON TRANSISTOR

FEATURES • High fT fT = 5.5 GHz TYP. • | S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA • High speed switching characteristics • Equivalent NPN transistor is the NE02133 / 2SC2351. • Alternative of the 2SA1424.

文件：1.42336 Mbytes 页数：10 Pages

CEL

PNP Silicon Transistor (Medium power amplifier)

Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342

文件：239.94 Kbytes 页数：4 Pages

AUK

PNP Silicon Transistor (Medium power amplifier)

Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342M

文件：231.82 Kbytes 页数：4 Pages

AUK