PNP Epitaxial Silicon Transistor

Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • High Current Capability: IC= -15A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -230V • Wide S.O.A for reliable operation. • Ex

文件：215.59 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS

POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage

文件：112.41 Kbytes 页数：3 Pages

UTC

友顺

isc Silicon PNP Power Transistor

DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Complement to Type 2SC5200 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications

文件：151.62 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=-300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -3.0V(Max) @IC= -8A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：290.61 Kbytes 页数：2 Pages

ISC

无锡固电

TO-3P Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Collector Current Capability ● High Power Dissipation ● High Frequency ● High Voltage ● Complement to 2SC5200 APPLICATIONS ● High-Fidelity Audio Output Amplifier ● General Purpose Power Amplifier

文件：420.29 Kbytes 页数：2 Pages

JIANGSU

长电科技

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SC5200 APPLICATIONS • Power amplifier applications • Recommended for 100W high fidelity audio frequency amplifier output stage

文件：203.71 Kbytes 页数：4 Pages

JMNIC

锦美电子

Power Amplifier Applications

FEATURES ● High collector voltage：VCEO=230V (min) VCEO=250V (min) ● Complementary to 2SC5200 ● Recommended for 100W audio frequency amplifier output ● RoHS product APPLICATIONS ● Power Amplifier Applications

文件：501.15 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE

DESCRIPTION • High Current Capability • High Power Dissipation • High Collector-Emitter Breakdown Voltage- : V(BR)CEo= -230V(Min) • Complement to Type 2SC5200 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications

文件：302.86 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5200/FJL4315. • Full thermal and electrical Spice model

文件：232.3 Kbytes 页数：5 Pages

SYC