Silicon PNP Power Transistor

DESCRIPTION • High Transition Frenquency : fr=200MHz(Typ.) • Complementary to 2SC5171 APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

文件：67.79 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features High fT, complementary pair with 2SC5171. Applications General power and driver stage amplifier applications.

文件：1.00528 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP transistor in a TO-251 Plastic Package.

Descriptions Silicon PNP transistor in a TO-251 Plastic Package. Features High fT, complementary pair with 2SC5171I. Applications General power and driver stage amplifier applications.

文件：876.75 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP transistor in a TO-126 Plastic Package.

Descriptions Silicon PNP transistor in a TO-126 Plastic Package. Features High fT, complementary pair with 2SC5171S. Applications General power and driver stage amplifier applications.

文件：922.4 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

High-Current Switching Applications

High-Current Switching Applications • Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC4881

文件：133.11 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

complementary to 2sc5174

Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT= 70 MHz (typ.) • Complementary to 2SC5174

文件：198.78 Kbytes 页数：4 Pages

TOSHIBA

东芝

High-Current Switching Applications

High-Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175

文件：137.72 Kbytes 页数：4 Pages

TOSHIBA

东芝

High-Current Switching Applications DC-DC Converter Applications

High-Current Switching Applications DC-DC Converter Applications • Low collector saturation voltage: VCE (sat)= −0.4 V (max) (IC= −3 A) • High-speed switching: tstg= 1.0 μs (typ.) • Complementary to 2SC5176

文件：160.43 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Voltage Switching Applications

High-Voltage Switching Applications • High voltage: VCEO = −600 V

文件：175.61 Kbytes 页数：4 Pages

TOSHIBA

东芝