PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

文件：206.12 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：A1962R；Package：TO-3P；PNP Epitaxial Silicon Transistor

Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are

文件：484.8 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Package：TO-3P-3，SC-65-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 250V 17A TO3P

ONSEMI

安森美半导体

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

文件：150.14 Kbytes 页数：2 Pages

TOSHIBA

东芝

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC5242 APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage applications

文件：110.31 Kbytes 页数：2 Pages

ISC

无锡固电

PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

文件：206.12 Kbytes 页数：6 Pages

Fairchild

仙童半导体