2SA1300

TRANSISTOR(STROBOFLASHMEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •HighDCcurrentgainandexcellenthFElinearity :hFE(1)=140~600(VCE=−1V,IC=−0.5A) :hFE(2)=60(min),120(typ.)(VCE=−1V,IC=−4A) •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−2A,IB=−

2SA1300

PNPEPITAXIALSILICONTRANSISTOR

SILICONPNPEPITAXALTYPE DESCRIPTION *StroboFlashApplications. *MediumPowerAmplifierApplications. FEATURES *HighDCCurrentGainandExcellenthFELinearity. *hFE(1)=140-600,(VCE=-1V,IC=-0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE=-1V,IC=-4A) *LowSaturationVoltage *VCE(SAT

2SA1300

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:-2A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ:150℃ Tstg:-55℃to+150℃

2SA1300

StrobeFlashApplicationsMediumPowerAmplifierApplications

2SA1300

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description DesignedforuseStrobeflashandmediumpower amplifierapplications. Pinning 1=Emitter 2=Collector 3=Base

2SA1300

PNPPlasticEncapsulatedTransistor

FEATURES •HighDCCurrentgainandexcellenthFElinearity •LowSaturationVoltage

2SA1300

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGainandExcellenthFELinearity ●LowSaturationVoltage

2SA1300

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.75W(Tamb=25℃) CollectorcurrentICM:-2A Collector-basevoltageV(BR)CBO:-20V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-55℃to+150℃

2SA1300

TRANSISTOR(PNP)

FEATURES ●HighDCCurrentgainandexcellenthFElinearity ●Lowsaturationvoltage

2SA1300

SiliconPNPtransistorinaTO-92PlasticPackage

Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features HighDCcurrentgain,excellenthFElinearity,lowsaturationvoltage Applications Stroboflash,mediumpoweramplifierapplications.

2SA1300

SILICONPNPEPITAXALTYPE

2SA1300

TO-92Plastic-EncapsulateTransistors

FEATURES eHighDCCurrentGainandExcellentheLinearity eLowSaturationVoltage

ST2SA1300

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forstroboflashandmediumpoweramplifier applications. Thetransistorissubdividedintothreegroups,Y,G andL,accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.