丝印：C1815；Package：TO-92；Silicon NPN Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (

文件：602.02 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：212.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；Audio Frequency General Purpose Amplifier Applications

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：279.37 Kbytes 页数：4 Pages

TOSHIBA

东芝

丝印：C1815；Package：TO-92；TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：256.029 Kbytes 页数：4 Pages

TOSHIBA

东芝

SILICON NPN TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2SC1815 Series are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications.

文件：305.12 Kbytes 页数：3 Pages

Central

NPN Epitaxial Planar Tansistor

NPN Epitaxial Planar Tansistor

文件：173.07 Kbytes 页数：2 Pages

FCI

富加宜

丝印：HF；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High voltage and high current VCEO=50V(Min),IC=150mA(Max). ● Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) ● Low noise. ● Complementary to 2SA1015. APPLICATIONS ● Audio frequency general purpose amplifier applicati

文件：172.65 Kbytes 页数：4 Pages

BILIN

银河微电

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

文件：215.02 Kbytes 页数：1 Pages

DCCOM

道全

isc Silicon NPN Transistor

DESCRIPTION • High Voltage and High Current Vceo=50V(Min.), Ic=150mA(Max) • Excellent hFE Linearity • Low Noise • Complement to Type 2SA1015(O,Y,GR class) APPLICATIONS • Audio frequency general purpose amplifier Applications • Driver stage amplifier applications.

文件：169.49 Kbytes 页数：2 Pages

ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Power dissipation

文件：192.46 Kbytes 页数：5 Pages

JIANGSU

长电科技