丝印：7K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD2

文件：224.26 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：106.85 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

丝印：704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3

Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：103.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

• Low on-resistance: 2 Ω • Low threshold: 2 V (typ.) • Low input capacitance: 25 pF • Fast switching speed: 25 ns • Low input and output leakage • TrenchFET® power MOSFET • 2000 V ESD protection

文件：1.0269 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. „ FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

文件：164.63 Kbytes 页数：3 Pages

UTC

友顺

N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：74.38 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

丝印：C7K；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed

文件：127.12 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：K72；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：674.72 Kbytes 页数：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：674.72 Kbytes 页数：6 Pages

PANJIT

強茂

N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

文件：512.299 Kbytes 页数：4 Pages

YFWDIODE

佑风微