丝印：72K；Package：SOT23；N-Channel Advanced Power MOSFET

Features • 60V/0.2A, RDS (ON) =2500mΩ(Typ.)@VGS=10V RDS (ON) =2500mΩ(Typ.)@VGS=5V • ESD protected up to 2KV • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop C

文件：411.62 Kbytes 页数：8 Pages

RUICHIPS

锐骏半导体

丝印：K72；Package：SOT-23；N-Ch Small Signal MOSFET with ESD Protection

FEATURES • RDS(ON), VGS@10V, IDS@500mA=3Ω • RDS(ON), VGS@4.5V, IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Driver

文件：533.11 Kbytes 页数：4 Pages

SECOS

喜可士

Direct Logic-Level Interface: TTL/CMOS

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

文件：300.32 Kbytes 页数：5 Pages

SILIKRON

新硅能微电子

TrenchMOS™ logic level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications 1.4 Quick reference data n Logic level compatible n Very fast switching n Subminiature surface mount package n Gate-source ESD protection diodes

文件：347.49 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：72K；Package：SOT-23；Plastic-Encapsulate MOSFET

Features  High density cell design for low RDS(ON).  Voltage controlled small signal switch.  Rugged and reliable.  High saturation current capability.  ESD protected  Load Switch for Portable Devices.  DC/DC Converter.

文件：1.406 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

N-Channel Enhancement MOSFET

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected 2KV HBM

文件：461 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：7002K；Package：SOT-23；N-Channel Enhancement MOSFET

Features Low On-Resistance:RDS(ON) Low GateThresholdVoltage Low InputCapacitance Fast SwitchingSpeed Low Input/OutputLeakage ESD Protected 2KV HBM

文件：512.299 Kbytes 页数：4 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Mosfets

N-Channel MOSFET FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

文件：384.2 Kbytes 页数：5 Pages

HOTTECH

合科泰

丝印：7002；Package：SOT23；60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

文件：1.01742 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

N-Channel 60-V(D-S) MOSFET

General FEATURE ●High density cell design for Low RDS(on) ●Voltage controlled small signal switch ●Rugged and reliable ●High saturation current capability ●ESD protected 2KV HBM APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

文件：824.43 Kbytes 页数：5 Pages

TUOFENG

拓锋半导体