N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 500 mAmpere CONSTRUCTION * N-Channel Enhancement with ESD protection in input FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capabilit

文件：576.94 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.300 Ampere CONSTRUCTION * N-Channel Enhancement with ESD protection in input MARKING * PK1 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation

文件：532.57 Kbytes 页数：5 Pages

CHENMKO

力勤

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 7.5 ns • Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Vo

文件：183.33 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal MOSFET 60 V, 310 mA, Single, N?묬hannel, SOT??3

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoH

文件：104.79 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：205.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 7.5 ns • Low Input and Output Leakage • Compliant to RoHS Directive 2002/95/EC BENEFITS • Low Offset Voltage • Low-Vo

文件：194.4 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm

Features • Low RDS(on) • Small Footprint Surface Mount Package • Trench Technology • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：205.12 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：-7F；Package：SOT-23；TrenchMOS Logic Level FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Very fast switching ■ Surface-mounted package ■ TrenchMOS technology Applications ■ Logic level translator ■ High-

文件：126.94 Kbytes 页数：11 Pages

PHI

PHI

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

文件：444.49 Kbytes 页数：14 Pages

MICROCHIP

微芯科技

MOSFET

MOSFET (N-Channel) RoHS Device Features Power dissipation : 0.35W

文件：183.7 Kbytes 页数：4 Pages

COMCHIP

典琦