丝印：7K***；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：233.86 Kbytes 页数：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel MOSFET

Features • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • ESD Protected up to 2KV (HBM) • Marking : 72K • Halogen free available upon request by adding suff

文件：392.24 Kbytes 页数：7 Pages

MCC

丝印：H702K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

文件：697.75 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：H702K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

文件：701.39 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：-2K；Package：SOT-23；N-channel TrenchMOS FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level compatible ■ Very fast switching ■ Subminiature surface-mounted package ■ Gate-source ElectroStatic Discharge (ESD) protection diodes Applicat

文件：94.25 Kbytes 页数：11 Pages

恩XP

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON), VGS @10V, IDS@ 500mA=2Ω RDS(ON), VGS @4.5V, IDS@ 200mA=3Ω FEATURES • Advanced Trench Process Technology • Ultra Low On Resistance : 2Ω • Fast Switching Speed : 20ns • Low Input and Output Leakage Current • 2KV ESD Protection • Specially Designed for High Speed Circuit, Battery Ope

文件：251.12 Kbytes 页数：4 Pages

HY

虹扬科技

N-Channel Enhanceent Mode Field Effect Transistor

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

文件：41.11 Kbytes 页数：1 Pages

KEXIN

科信电子

N-CHannel Enhancement Mode MOSFET

High Speed Switching Application Features • ESD rating: 1000V (HBM) • Low On-Resistance: RDS(on)

文件：242.86 Kbytes 页数：6 Pages

KODENSHI

可天士

丝印：72K；Package：SOT-23；Plastic-Encapsulate MOSFETS

MOSFET( N-Channel ) Features: 1. RDS(ON) is low; 2. The control trigger is sensitive; 3. With electrostatic protection; Applications: Used for general switching and phase circuits.

文件：307.7 Kbytes 页数：1 Pages

SHENZHENSLS

三联盛

SOT-23 Plastic-Encapsu l ate MOSFET

N -Channel MOSFET Features ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected Applications ● Load Switch for Portable Devices ● DC/DC Converter

文件：2.46889 Mbytes 页数：5 Pages

HDSEMI

海德半导体