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型号	下载订购	功能描述	制造商上传企业	LOGO
2N7002K-AU_AX_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_AY_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_AY_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_B0_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_B0_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_B1_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_B1_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_B2_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_B2_10001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT
2N7002K-AU_BD_00001	文件：326.7 Kbytes Page：7 Pages	60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays 文件：326.7 Kbytes 页数：7 Pages	PANJIT 強茂	PANJIT

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技术参数

Pb-free：
Pb
Halide free：
H
Status：
Active
Channel Polarity：
N-Channel
Configuration：
Single
V(BR)DSS Min (V)：
60
VGS Max (V)：
±20
VGS(th) Max (V)：
2.5
ID Max (A)：
0.115
PD Max (W)：
0.2
RDS(on) Max @ VGS = 4.5 V(mΩ)：
7500
RDS(on) Max @ VGS = 10 V(mΩ)：
7500
Qg Typ @ VGS = 10 V (nC)：
1
Ciss Typ (pF)：
20
Package Type：
SOT-23-3

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市锦达世纪科技有限公司	2N7002	恩XP	15+	SOT23	30000	全新原装	询价
标准国际(香港)有限公司	2N7002		25+		50	公司现货库存	询价
深圳市鸿昌盛电子科技有限公司	2N7002		25+		50	公司现货库存	询价
深圳市益中天科技发展有限公司	2N7002	ON	17+18+	SOT23	488459	原厂原装,本地现货库存,假一罚十!	询价
讯运(深圳/上海)电子有限公司	2N7002	长电	11+	SOT23	50000	深圳现货	询价
深圳市联世界科技有限公司	2N7002	恩XP	24+/25+	SOT236	99000	100%原装正品真实库存,支持实单	询价
深圳市纳立科技有限公司	2N7002	ON-SEMI	22+	N/A	9000	原装正品香港现货	询价
深圳市华高宇电子有限公司	2N7002	恩XP	1118	SOT236	340	现货库存,有单来谈	询价
深圳市得捷芯城科技有限公司	2N7002	恩XP	25+		7589	全新原装现货,支持排单订货,可含税开票	询价
深圳诚思涵科技有限公司	2N7002	恩XP	16+	SOT23	12350	进口原装现货/价格优势!	询价

更多2N7002供应商更新时间2021-9-16 14:01:00

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