丝印：20NM65N；Package：TO-220FP；N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET ass

文件：864.05 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：20NM65N；Package：TO-220；N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET ass

文件：864.05 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：20NM65N；Package：I2PAKFP(TO-281)；N-channel 650 V, 15 A, 0.250 廓 typ., MDmesh??II Power MOSFET in a I짼PAKFP package

文件：783.17 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Low gate input resistance

文件：573.92 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.19Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.250 廓, 15 A TO-220, TO-220FP second generation MDmesh??Power MOSFET

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description These devices are N-channel Power MOSFETs realized using the second generation MDmesh™ technology. This revolutionary Power MOSFET ass

文件：864.05 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体