isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.4A@ TC=25℃ ·Drain Source Voltage -VDSS=650V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.71 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：6N65K3；Package：TO-220FP；N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

文件：906.85 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、1.1 Ohm典型值、5.4 A SuperMESH3(TM) 功率MOSFET，TO-220FP封装

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitab • 100% avalanche tested \n• Extremely high dv/dt capability \n• Gate charge minimized \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

意法半导体

N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP narrow leads package

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for • 100% avalanche tested\n• Extremely high dv/dt capability\n• Gate charge minimized• Very low intrinsic capacitance\n• Improved diode reverse recovery characteristics\n• Zener-protected;

ST

意法半导体