| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STF6N60M2 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
STF6N60M2 | N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET，TO-220FP封装; • Extremely low gate charge \n• Excellent output capacitance (Coss)profile \n• 100% avalanche tested \n• Zener-protected; These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.\n\n | STSTMicroelectronics 意法半导体意法半导体集团 | ST | |
STF6N60M2 | Extremely low gate charge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | |
STF6N60M2 | N-Channel 650V (D-S) Power MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
N-channel600V,1.00typ.,5.5AMDmeshM2PowerMOSFETinanSOT223-2package Features •Extremelylowgatecharge •Excellentoutputcapacitance(Coss)profile •100avalanchetested •Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmeshM2 technology.Thankstoitsstriplayoutandanimprovedverticalstructure,thedevice | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology.Thankstotheirstriplayoutandimprovedverticalstructure,thedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficiency | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
技术参数
- Package：
TO-220FP
- Grade：
Industrial
- VDSS(V)：
600
- RDS(on)_max(@ VGS=10V)(Ω)：
1.2
- Drain Current (Dc)_max(A)：
4.5
- PTOT_max(W)：
20
- Qg_typ(nC)：
8
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
22+ |
TO-220FP-3 |
6005 |
原装正品现货 可开增值税发票 |
询价 | ||
STM |
23+ |
TO-220FP-3 |
10000 |
原装现货支持送检 |
询价 | ||
ST(意法半导体) |
24+ |
TO-220F |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220FP-3 |
4650 |
绝对原装公司现货 |
询价 | ||
ST |
24+ |
TO-220-3 |
80000 |
原厂正规渠道现货、保证原装正品 |
询价 | ||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ST |
24+ |
TO-220FP |
50000 |
ST一级代理专营品牌绝对进口原装假一赔十 |
询价 | ||
ST(意法半导体) |
2447 |
TO-220F(TO-220IS) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
STM |
1809+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
STMicroelectronics |
24+ |
原厂原装 |
5850 |
原装正品 现货库存价格优势! |
询价 |
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