丝印：20E；Package：SOT-23；20V N-Channel Enhancement Mode MOSFET– ESD Protected

Features ● RDS(ON), VGS@4.5V, ID@5.1A

文件：306.29 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：20EP10LM；Package：PG-SOT223-4；OpriMOS power-Transistor,-100V

Features *P-channel *Very low on-resistance Rds(on) @ Vgs=4.5 V *Enhancement mode *100 avalanche tested *Logic level *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

文件：1.78341 Mbytes 页数：11 Pages

Infineon

英飞凌

Low Forward Voltage drop Diode

FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available

文件：22.25 Kbytes 页数：2 Pages

NIEC

Nihon Inter Electronics Corporation

Low Forward Voltage drop Diode

FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available

文件：22.23 Kbytes 页数：2 Pages

NIEC

Nihon Inter Electronics Corporation

Metal Oxide Varistors Data Sheet

文件：325.33 Kbytes 页数：5 Pages

HUAXINAN

华兴安

Metal Oxide Varistors

文件：1.8945 Mbytes 页数：65 Pages

WPI

Metal Oxide Varistors Data Sheet

文件：325.33 Kbytes 页数：5 Pages

HUAXINAN

华兴安

Metal Oxide Varistors Data Sheet

文件：325.33 Kbytes 页数：5 Pages

HUAXINAN

华兴安

Metal Oxide Varistors

文件：1.8945 Mbytes 页数：65 Pages

WPI

Metal Oxide Varistors Data Sheet

文件：325.33 Kbytes 页数：5 Pages

HUAXINAN

华兴安