丝印：10N10；Package：SPR-8PP；N-Channel Enhancement Mode Power MOSFET

文件：360.75 Kbytes 页数：4 Pages

SECOS

喜可士

丝印：10N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features Vos =100Vl0 =10A Rosin)

文件：418.13 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：10N100；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The RM10N100S8 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A RDS(ON)

文件：425.06 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：10N10G；Package：PQFN8；MOSFET - Power, Single N-Channel, PQFN8 100 V, 10.8 m, 83 A

文件：267.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：10N10AT；Package：SOP-8；100V N-Channel DTMOS

文件：791.93 Kbytes 页数：7 Pages

WUMC

紫光国微

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 页数：7 Pages

UTC

友顺

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 页数：7 Pages

UTC

友顺

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 页数：7 Pages

UTC

友顺

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 页数：7 Pages

UTC

友顺

SIPMOS Power-Transistor

文件：787.36 Kbytes 页数：8 Pages

Infineon

英飞凌