丝印：10N10G；Package：PQFN8；MOSFET - Power, Single N-Channel, PQFN8 100 V, 10.8 m, 83 A

文件：267.54 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET, N-Channel, Shielded Gate, POWERTRENCH

文件：395.57 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS010N10MCLTAG − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 10.6 m, 57.8 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS010N10MCLTAG − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体