丝印：040N08NS；Package：DFN5060-8L；80V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

文件：704.15 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：040N10NS；Package：DFN5060-8L；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

文件：707.51 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：040TO65G3；Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package

Features • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters Description This silicon carbide Po

文件：1.52722 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：040W65G3；Package：HiP247-4；Silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications • Switching mode pow

文件：483.84 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：040N10SC；Package：PG-WSON-8-2；OptiMOSTM 5 Power-Transistor, 100 V

文件：1.01508 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：040N065S；Package：PG-TO220FullPAK；OptiMOSTM 5 Power-Transistor, 60 V

文件：1.07468 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：040N085S；Package：PG-TO220FullPAK；OptiMOSTM 5 Power-Transistor, 80 V

文件：1.07512 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：040N08NS；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

文件：1.11335 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：0406NAB；Package：LFPAK56；40 V, 6 A NPN high power bipolar transistor

文件：723.53 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：0406PAB；Package：LFPAK56；40 V, 6 A PNP high power bipolar transistor

文件：719.26 Kbytes 页数：15 Pages

NEXPERIA

安世