丝印：040N06NS；Package：PG-TO220-3；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：846.92 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：040N08NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.06372 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：040N；Package：WDFNW6；MOSFET - Power, Dual N-Channel 60 V, 38 m, 18 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：138.6 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：0406NAB；Package：SOT669；40 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：286.82 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：0406PAB；Package：SOT669；40 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件：280.88 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：040N60EC；Package：TO-247AD-3LD；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 40mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC of Industrial Power/ Server

文件：901.39 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：040VU03E；Package：CFP15B；40 V, 3 A low VF Schottky barrier rectifier

1. General description Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Very low forward voltage • High power capability due to clip-bond technology • Small and thin SMD

文件：264.35 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：040V；Package：CFP15B；40 V, 3 A low VF Schottky barrier rectifier

1. General description Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Very low forward voltage • High power capability due to clip-bond technology • Small and thin SMD

文件：263.95 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：040VU05E；Package：CFP15B；40 V, 5 A low VF Schottky barrier rectifier

1. General description Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Very low forward voltage • High power capability due to clip-bond technology • Small and thin SMD

文件：263.91 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：040V；Package：CFP15B；40 V, 5 A low VF Schottky barrier rectifier

1. General description Planar Low VF Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Very low forward voltage • High power capability due to clip-bond technology • Small and thin SMD

文件：263.48 Kbytes 页数：11 Pages

NEXPERIA

安世