PHPT60406PY-Q规格书贸易商安世NEXPERIA-114ic电子网

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PHPT60406PY-Q	文件：280.88 Kbytes Page：14 Pages	Marking：0406PAB；Package：SOT669；40 V, 6 A PNP high power bipolar transistor 1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT60406NY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PHPT60406NY	文件：723.53 Kbytes Page：16 Pages	40V,6ANPNhighpowerbipolartransistor	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PHPT60406NY-Q	文件：286.82 Kbytes Page：14 Pages	40V,6ANPNhighpowerbipolartransistor 1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT60406PY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
PHPT60406PY	文件：719.26 Kbytes Page：15 Pages	40V,6APNPhighpowerbipolartransistor	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA

更多PHPT60406PY-Q供应商更新时间2025-7-18 14:17:00