丝印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK NPN/PNP complement: PHPT610030NPK 2. Features and benefits • High thermal power dissipation capability • Suitabl

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NPN/NPN high power double bipolar transistor

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丝印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-C

文件：283.28 Kbytes 页数：14 Pages

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NPN/NPN high power double bipolar transistor

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.\n PNP/PNP complement: PHPT610030PK.\n NPN/PNP complement: PHPT610030NPK. • High thermal power dissipation capability\n• Suitable for high temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

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安世

NPN/NPN high power double bipolar transistor

NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. • High thermal power dissipation capability\n• Suitable for high temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• Qualified according to AEC-Q101 and recommended for use;

Nexperia

安世