丝印：1006PAB；Package：SOT669；100 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件：717.88 Kbytes 页数：16 Pages

NEXPERIA

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100 V, 6 A PNP high power bipolar transistor

文件：237.89 Kbytes 页数：16 Pages

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丝印：1006PAB；Package：SOT669；100 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：279.23 Kbytes 页数：14 Pages

NEXPERIA

安世

100 V, 6 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669(LFPAK56) Surface-Mounted Device(SMD) power plastic package.\n NPN complement: PHPT61006NY • High thermal power dissipation capability\n• High temperature applications up to 175 °C\n• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified.;

Nexperia

安世

100 V, 6 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT61006NY-Q

Nexperia

安世

Package：SC-100，SOT-669；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 6A LFPAK56 PWRSO8

Nexperia USA Inc.