丝印：1003NAB；Package：LFPAK56；100 V, 3 A NPN high power bipolar transistor

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丝印：1003NAB；Package：SOT669；100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

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NEXPERIA

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100 V, 3 A NPN high power bipolar transistor

文件：732.28 Kbytes 页数：17 Pages

NEXPERIA

安世

100 V, 3 A NPN high power bipolar transistor

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n PNP complement: PHPT61003PY • High thermal power dissipation capability\n• Suitable for high temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

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100 V, 3 A NPN high power bipolar transistor

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n PNP complement: PHPT61003PY-Q

Nexperia

安世

Package：SC-100，SOT-669；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 3A LFPAK56 PWRSO8

Nexperia USA Inc.