100 V, 2 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT61002NYCLH. • High thermal power dissipation capability\n• Suitable for high temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation;

Nexperia

安世

丝印：1002PCC；Package：LFPAK56；100 V, 2 A PNP high power bipolar transistor

文件：261.36 Kbytes 页数：15 Pages

NEXPERIA

安世

Package：SC-100，SOT-669；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 2A LFPAK56 PWRSO8

Nexperia USA Inc.

SI-61002

文件：369.01 Kbytes 页数：4 Pages

BEL

SI-61002-F

文件：326.63 Kbytes 页数：4 Pages

BEL