丝印：0610NAB；Package：LFPAK56；60 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printe

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60 V, 10 A NPN high power bipolar transistor

文件：251.36 Kbytes 页数：17 Pages

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丝印：0610NAB；Package：SOT669；60 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：283.74 Kbytes 页数：14 Pages

NEXPERIA

安世

60 V, 10 A NPN high power bipolar transistor

NPN high power bipolar transistor in a SOT669(LFPAK56) Surface-Mounted Device(SMD) power plastic package.\n PNP complement: PHPT60610PY • High thermal power dissipation capability\n• High temperature applications up to 175 °C\n• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified.;

Nexperia

安世

60 V, 10 A NPN high power bipolar transistor

Nexperia

安世

Package：SC-100，SOT-669；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 10A LFPAK56 PWRSO8

Nexperia USA Inc.