丝印：1003NPK；Package：LFPAK56D；NPN/PNP high power double bipolar transistor

1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK PNP/PNP complement: PHPT610030PK 2. Features and benefits • High thermal power dissipation capability • Suitable

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NPN/PNP high power double bipolar transistor

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丝印：1003NPK；Package：SOT1205；NPN/PNP high power double bipolar transistor

1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK-Q PNP/PNP complement: PHPT610030PK-Q 2. Features and benefits • High thermal power dissipation capability • Suit

文件：335.63 Kbytes 页数：18 Pages

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NPN/PNP high power double bipolar transistor

NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.\n NPN/NPN complement: PHPT610030NK.\n PNP/PNP complement: PHPT610030PK. • High thermal power dissipation capability\n• Suitable for high temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

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NPN/PNP high power double bipolar transistor

NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package.\n NPN/NPN complement: PHPT610030NK-Q\n PNP/PNP complement: PHPT610030PK-Q

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安世