丝印：0606PAB；Package：SOT669；60 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Re

文件：718.32 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 6 A PNP high power bipolar transistor

文件：239.36 Kbytes 页数：15 Pages

恩XP

丝印：0606PAB；Package：SOT669；60 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件：281.2 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 6 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60606NY. • High thermal power dissipation capability\n• Suitable for high temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

60 V, 6 A PNP high power bipolar transistor

恩XP

恩智浦

60 V, 6 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60606NY-Q

Nexperia

安世

Package：SC-100，SOT-669；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 6A LFPAK56 PWRSO8

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司