丝印：0606PAB；Package：SOT669；60 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件：281.2 Kbytes 页数：14 Pages

NEXPERIA

安世

60 V, 6 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60606NY-Q

Nexperia

安世

Class K-5

FEATURES/BENEFITS : • Easy to read imprint label for quick recognition and replacement • Low cost for high protection value

文件：112.32 Kbytes 页数：2 Pages

MERSEN

美尔森

Time Delay/Class RK5

FEATURES/BENEFITS : • Time-delay • Current-limiting • AC & DC rated • Optional solid state SmartSpot blown fuse indicator • Time-delay for motor start-ups and transformer inrush currents without nuisance opening • Current-limiting for low peak let-thru current • Rejection-style design prev

文件：285.84 Kbytes 页数：2 Pages

MERSEN

美尔森

60 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件：722.3 Kbytes 页数：16 Pages

NEXPERIA

安世