丝印：0606PAB；Package：SOT669；60 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Re

文件：718.32 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：0606PAB；Package：SOT669；60 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件：281.2 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司