丝印：063N15N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.04975 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：063N15N5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.7642 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：063N15N5；Package：PG-HSOG-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.65361 Mbytes 页数：13 Pages

Infineon

英飞凌