丝印：063N15N5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.7642 Mbytes 页数：13 Pages

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英飞凌

OptiMOS ™ 5 功率 MOSFET 150 V 采用 TOLT 技术，具有出色的热性能

\n优势:\n• Increased system efficiency enabling extended battery life time\n• High power density\n• Superior thermal performance\n• Saving in cooling system\n• Minimized thermal resistance to heatsink;

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英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.65361 Mbytes 页数：13 Pages

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Very low reverse recovery charge (Qrr)

文件：1.2424 Mbytes 页数：11 Pages

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Very low reverse recovery charge (Qrr) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.13004 Mbytes 页数：11 Pages

Infineon

英飞凌