丝印：06315N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Very low reverse recovery charge (Qrr)

文件：1.2424 Mbytes 页数：11 Pages

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OptiMOS ™功率 MOSFET 150 V 采用 PQFN 5x6 源极朝下封装，具有业界领先的 RDS(on)。

\n优势:\n• Minimized conduction losses\n• Reduced voltage overshoot\n• Increased maximum current capability\n• Fast switching\n• Less device paralleling required\n• Lowest RDS(on) on a 5x6 footprint\n• Improved thermal performance\n• Easy thermal management\n• Best switching performance\n• Industry-st;

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丝印：06315NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Very low reverse recovery charge (Qrr) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.13004 Mbytes 页数：11 Pages

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丝印：TA；Package：PG-WHTFN-9；MOSFET OptiMOS™ 5 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Very low reverse recovery charge (Qrr)

文件：857.38 Kbytes 页数：12 Pages

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丝印：JA；Package：PG-WHSON-8；MOSFET OptiMOS™ 5 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Very low reverse recovery charge (Qrr)

文件：1.08362 Mbytes 页数：12 Pages

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N-Channel Power MOSFET

OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) • Cutting edge 150 V silicon technology\n• Outstanding FOMs\n• Improved thermal performance\n• Ultra-low parasitics\n• Maximized chip/package ratio\n• Center-Gate footprint\n• Industry-standard package\n\n优势:\n• Best switching performance\n• Minimized conduction losses\n• Fast switching\n• Reduced v;

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英飞凌

OptiMOS ™功率 MOSFET 150 V 采用 PQFN 5x6 源极向下 DSC 封装，具有业界领先的 RDS(on)。

功率 MOSFET IQD063N15NM5SC 具有 6,32 mOhm 的低 RDS(on) 以及出色的热性能，可轻松实现功率损耗管理。此外，与包覆成型封装相比，双面冷却封装可消散五倍以上的功率。这使得各种终端应用的系统效率和功率密度更高。 • 尖端的 150 V 硅技术\n • 出色的 FOM\n • 改善热性能\n • 超低寄生效应\n • 最大化芯片/封装比;

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