IQD063N15NM5

丝印：06315N5；Package：PG-TSON-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Verylowreverserecoverycharge(Qrr)

IQD063N15NM5

OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down package with industry-leading RDS(on).; \n优势:\n• Minimized conduction losses\n• Reduced voltage overshoot\n• Increased maximum current capability\n• Fast switching\n• Less device paralleling required\n• Lowest RDS(on) on a 5x6 footprint\n• Improved thermal performance\n• Easy thermal management\n• Best switching performance\n• Industry-standard package\n;

IQD063N15NM5CG

丝印：06315NC；Package：PG-TTFN-9；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •Verylowreverserecoverycharge(Qrr) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IQD063N15NM5CGSC

丝印：TA；Package：PG-WHTFN-9；MOSFET OptiMOS™ 5 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •Optimizeddesignfordoublesidecooling •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •Verylowreverserecoverycharge(Qrr)

IQD063N15NM5CGSC

N-Channel Power MOSFET; • Cutting edge 150 V silicon technology\n• Outstanding FOMs\n• Improved thermal performance\n• Ultra-low parasitics\n• Maximized chip/package ratio\n• Center-Gate footprint\n• Industry-standard package\n\n优势:\n• Best switching performance\n• Minimized conduction losses\n• Fast switching\n• Reduced voltage overshoot\n• Increased maximum current capability\n• Less device paralleling required\n• Lowest RDS(on) on a 5x6 footprint\n• Easy thermal management\n;

OptiMOS™ power MOSFETs 150 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)

IQD063N15NM5SC

丝印：JA；Package：PG-WHSON-8；MOSFET OptiMOS™ 5 Power‑Transistor, 150 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •Optimizeddesignfordoublesidecooling •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •Verylowreverserecoverycharge(Qrr)