丝印：063N15N5；Package：PG-HSOG-8；MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.65361 Mbytes 页数：13 Pages

Infineon

英飞凌

采用鸥翼式带引脚 TO（TOLG）封装的 OptiMOS™ 功率 MOSFET，可实现更高的板载热循环性能

\n优势:\n• High performance capability\n• High system reliability\n• High efficiency and lower EMI\n• Optimized board utilization\n• High thermal cycling on board performance;

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Very low reverse recovery charge (Qrr)

文件：1.2424 Mbytes 页数：11 Pages

Infineon

英飞凌

MOSFET OptiMOSTM 5 Power-Transistor, 150 V

Features • N-channel, normal level • Very low on-resistance RDS(on) • Very low reverse recovery charge (Qrr) • Superior thermal resistance • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.13004 Mbytes 页数：11 Pages

Infineon

英飞凌

MOSFET OptiMOS™ 5 Power‑Transistor, 150 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Superior thermal resistance • Optimized design for double side cooling • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • Very low reverse recovery charge (Qrr)

文件：857.38 Kbytes 页数：12 Pages

Infineon

英飞凌