丝印：06N06L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：668.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：06N06L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The 06N06LA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：06N06L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：668.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：06N06L；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The 06N06LA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：891.51 Kbytes 页数：6 Pages

GOFORD

谷峰半导体