丝印：06NG；Package：DPAK；Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：297.49 Kbytes 页数：8 Pages

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安森美半导体

丝印：06NG；Package：IPAK；Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：297.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：06NG；Package：IPAK；Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：297.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：06NG；Package：DPAK；Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

文件：297.49 Kbytes 页数：8 Pages

ONSEMI

安森美半导体