070N

型号：NVLJWS070N06CLTAG；Package：WDFN6；MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A

Features •SmallFootprintforCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

070N10NS

型号：BSC070N10NS3G；Package：PG-TDSON-8；OptiMOSTM3 Power-Transistor

Features •Verylowgatechargeforhighfrequencyapplications •Optimizedfordc-dcconversion •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Qualifiedac

070N10N5

型号：BSC070N10NS5；Package：PG-TDSON-8；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

070N04M

型号：TF070N04M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

●GeneralDescription TheTF070N04MusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching

070N10L5

型号：BSC070N10LS5；Package：PG-TDSON-8；OptiMOSTM5 Power-Transistor, 100 V

070N10SC

型号：BSC070N10NS5SC；Package：PG-WSON-8-2；OptiMOSTM 5 Power-Transistor, 100 V