丝印：070N；Package：WDFN6；MOSFET - Power, Single N-Channel 60 V, 62 m, 11 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：160.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：070N10NS；Package：PG-TDSON-8；OptiMOSTM3 Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified ac

文件：440.06 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：070N10N5；Package：PG-TDSON-8；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.22192 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：070N04M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF070N04M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：4.89434 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：070N10L5；Package：PG-TDSON-8；OptiMOSTM5 Power-Transistor, 100 V

文件：1.08135 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：070N10SC；Package：PG-WSON-8-2；OptiMOSTM 5 Power-Transistor, 100 V

文件：991.58 Kbytes 页数：11 Pages

Infineon

英飞凌

Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.22192 Mbytes 页数：12 Pages

Infineon

英飞凌

OptiMOSTM3 Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified ac

文件：440.06 Kbytes 页数：10 Pages

Infineon

英飞凌