OptiMOSTM3 Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified ac

文件：440.06 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：070N10NS；Package：PG-TDSON-8；OptiMOSTM3 Power-Transistor

Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified ac

文件：440.06 Kbytes 页数：10 Pages

INFINEON

英飞凌

N-Channel Power MOSFET

文件：394.93 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 12.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：295.59 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

文件：394.93 Kbytes 页数：6 Pages

ONSEMI

安森美半导体